EQUIVALENT CIRCUIT OF GAAS DUAL GATE MESFETSTSIRONIS C; MEIERER R.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 13; PP. 477-479; BIBL. 6 REF.Article

A TEMPERATURE MODEL FOR THE GAAS MESFETCURTICE WR; YONG HOON YUN.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 8; PP. 954-962; BIBL. 23 REF.Article

PHYSICS OF SHORT-GATE GAAS MESFET'S FROM HYDROSTATIC PRESSURE STUDIESKIEHL RA; OSBOURN GC.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 8; PP. 977-983; BIBL. 36 REF.Article

DIRECT COMPARISON OF THE ELECTRON-TEMPERATURE MODEL WITH THE PARTICLE-MESH (MONTE CARLO) MODEL FOR THE GAAS MESFETCURTICE WR.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 12; PP. 1942-1943; BIBL. 7 REF.Article

HIGH-EFFICIENCY GAAS POWER MESFETS PREPARED BY ION IMPLANTATIONFENG M; KANBER H; EU VK et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 25-26; PP. 1097-1098; BIBL. 6 REF.Article

HIGH-SPEED FREQUENCY DIVIDERS WITH QUASI-NORMALLY-OFF GAAS MESFETSDAMAY KAVALA F; NUZILLAT G; ARNODO C et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 25-26; PP. 968-970; BIBL. 8 REF.Article

ORIENTATION EFFECT OF SELF-ALIGNED SOURCE/DRAIN PLANAR GAAS SCHOTTKY BARRIER FIELD-EFFECT TRANSISTORSYOKOYAMA N; ONODERA H; OHNISHI T et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 3; PP. 270-271; BIBL. 5 REF.Article

EVIDENCE OF DETRIMENTAL SURFACE EFFECTS ON GAAS POWER MESFETSDUMAS JM; PAUGAM J; LE MOUELLIC C et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 25-26; PP. 1094-1095; BIBL. 9 REF.Article

THE EFFECT OF LOGIC CELL CONFIGURATION, GATELENGTH, AND FAN-OUT ON THE PROPAGATION DELAYS OF GAAS MESFET LOGIC GATESNAMORDI MR; DUNCAN WM.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 3; PP. 402-410; BIBL. 7 REF.Article

POWER-LIMITING BREAKDOWN EFFECTS IN GAAS MESFET'SFRENSLEY WR.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 8; PP. 962-970; BIBL. 18 REF.Article

RELIABILITY STUDY OF GAAS MESFET'S.IRIE T; NAGASAKO I; KOHZU H et al.1976; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; U.S.A.; DA. 1976; VOL. 24; NO 6; PP. 321-328; BIBL. 4 REF.Article

GAAS DUAL-GATE SCHOTTKY-BARRIER FET'S FOR MICROWAVE FREQUENCIES.ASAI S; MURAI F; KODERA H et al.1975; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1975; VOL. 22; NO 10; PP. 897-904; BIBL. 14 REF.Article

ETUDE DE PORTES LOGIQUES RAPIDES ET A FAIBLE CONSOMMATION A TRANSISTORS MESFET INTEGRES SUR SILICIUM.PURON JP.1975; ; S.L.; DA. 1975; PP. 1-215; BIBL. 2 P.; (THESE DOCT. 3E CYCLE, SPEC. ELECTRON.; PARIS-SUD)Thesis

SI AND GAAS 0.5 MU M-GATE SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORSBAECHTOLD W; DAETWYLER K; FORSTER T et al.1973; ELECTRON. LETTERS; G.B.; DA. 1973; VOL. 9; NO 10; PP. 232-234; BIBL. 6 REF.Serial Issue

OPTIMIZATION OF LOW-NOISE GAAS MESFETS'SFUKUI H; DILORENZO JV; HEWITT BS et al.1980; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 6; PP. 1034-1037; BIBL. 11 REF.Article

DEVICE QUALITY N-TYPE LAYERS PRODUCED BY ION IMPLANTATION OF TE AND S INTO GAAS.STOLTE CA.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 585-587; BIBL. 2 REF.Conference Paper

GAAS MESFET PERFORMANCE.HUANG HC; DRUKIER I; CAMISA RL et al.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 235-237; BIBL. 4 REF.Conference Paper

RECENT ADVANCES IN HIGH-FREQUENCY FIELD-EFFECT TRANSISTORS.LIECHTI CA.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1974; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 6-10; BIBL. 18 REF.Conference Paper

RELIABILITY STUDIES OF ONE-MICRON SCHOTTKY GATE GAAS FET.KOZU H; NAGASAKO T; OGAWA M et al.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 247-250; BIBL. 1 REF.Conference Paper

FABRICATION DE TRANSISTORS A EFFET DE CHAMP AU GAAS A GRILLE SCHOTTKYYAMAGUCHI T; KOMIYA Y; TARUI Y et al.1976; BULL. ELECTROTECH. LAB.; JAP.; DA. 1976; VOL. 40; NO 4-5; PP. 465-471; ABS. ANGL.; BIBL. 3 REF.Article

ANOMALOUS GATE-TO-DRAIN CAPACITANCE CHARACTERISTICS OF GAAS MESFETSYOKOYAMA K; TOMIZAWA M; TAKADA T et al.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 6; PP. 719-721; BIBL. 11 REF.Article

COMPARATIVE LOGIC FIGURE OF MERIT OF CURRENT HIGH-SPEED TRANSISTORSGIACOLETTO LJ.1980; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 5; PP. 908-910; BIBL. 4 REF.Article

STABILITY OF PERFORMANCE AND INTERFACIAL PROBLEMS IN GAASMESFET'SITOH T; YANAI H.1980; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 6; PP. 1037-1045; BIBL. 28 REF.Article

POWER GAAS MESFET WITH A HIGH DRAIN-SOURCE BREAKDOWN VOLTAGE.FUKUTA M; SUYAMA K; SUZUKI H et al.1976; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; U.S.A.; DA. 1976; VOL. 24; NO 6; PP. 312-317; BIBL. 14 REF.Article

A MEMORY A CELL ARRAY WITH NORMALLY OFF A TYPE SCHOTTKY A BARRIER FET'SDRANGEID KE; BROOM RF; JUTZI W et al.1972; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1972; VOL. 7; NO 4; PP. 277-282; BIBL. 13 REF.Serial Issue